HGTG15N120C3D
Description
The HGTG15N120C3D is a MOS gated high voltage switching device bining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25o C and 150o C. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. The diode used in anti-Parallel with the IGBT is the same as the RHRP15120. The IGBT was formerly development type TA49145.
Features
- 35A, 1200V at TC = 25o C
- 1200V Switching SOA Capability
- Typical Fall Time at TJ = 150o C
- - . . . . 350ns
- Short Circuit Rating
- Low Conduction Loss
Ordering Information
PART NUMBER HGTG15N120C3D PACKAGE TO-247 BRAND 15N120C3D
NOTE: When ordering, use the entire...
