HGTG20N50C1D Overview
Key Specifications
Max Operating Temp: 150 °C
Description
The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
Key Features
- Latch Free Operation
- Typical Fall Time < 500ns
- High Input Impedance
- Low Conduction Loss
- With Anti-Parallel Diode
