HGTG20N50C1D Datasheet | Intersil

HGTG20N50C1D April 1995 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode Package JEDEC STYLE TO-247 EMITTER COLLECTOR COLLECTOR (BOTTOM SIDE METAL) GATE Features - 20A, 500V - Latch Free Operation - Typical Fall Time < 500ns - High Input Impedance - Low Conduction Loss - With Anti-Parallel Diode - tRR < 60ns Description The IGBT is a MOS gated high voltage switching device bining the best Features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The diode used in parallel with the IGBT is an ultrafast (tRR < 60ns) with soft recovery characteristic. IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contractors. PACKAGING AVAILABILITY PART NUMBER HGTG20N50C1D PACKAGE TO-247 BRAND G20N50C1D Terminal Diagram C G E NOTE: When ordering, use the entire part...