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HGTG20N50C1D Datasheet N-channel IGBT

Manufacturer: Intersil (now Renesas)

Overview: HGTG20N50C1D April 1995 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode Package JEDEC STYLE TO-247 EMITTER COLLECTOR COLLECTOR (BOTTOM SIDE METAL).

General Description

The IGBT is a MOS gated high voltage switching device combining the best

Key Features

  • 20A, 500V.
  • Latch Free Operation.
  • Typical Fall Time < 500ns.
  • High Input Impedance.
  • Low Conduction Loss.
  • With Anti-Parallel Diode.
  • tRR < 60ns.

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