HGTG34N100E2 Description
The HGTG34N100E2 is a MOS gated high voltage switching device bining the best.
HGTG34N100E2 Key Features
- 34A, 1000V
- Latch Free Operation
- Typical Fall Time
- High Input Impedance
- Low Conduction Loss
HGTG34N100E2 is N-Channel IGBT manufactured by Intersil.
| Part Number | Description |
|---|---|
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| HGTG30N60A4D | N-Channel IGBT |
| HGTG30N60B3 | N-Channel IGBT |
The HGTG34N100E2 is a MOS gated high voltage switching device bining the best.