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HGTG5N120CND Datasheet N-channel IGBT

Manufacturer: Intersil (now Renesas)

Overview: HGTG5N120CND, HGTP5N120CND, HGT1S5N120CNDS Data Sheet January 2000 File Number 4598.2 25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG5N120CND, HGTP5N120CND and HGT1S5N120CNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family.

Key Features

  • of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is developmental type TA49309. The diode used in anti-parallel is developmental type TA49058. The IGBT is ideal for many high voltage switching.

HGTG5N120BND from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
Fairchild Semiconductor Logo HGTG5N120BND N-Channel IGBT Fairchild Semiconductor

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