HGTH12N40E1
Description
The HGTH12N40C1, HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40C1, HGTP10N40E1, HGTP10N50C1 and HGTP10N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low-power integrated circuits.
Key Features
- VCE(ON): 2.5V Max
- TFI: 1µs, 0.5µs
- Low On-State Voltage
- Fast Switching Speeds
- High Input Impedance
- No Anti-Parallel Diode
