HGTP12N60D1 Datasheet | Intersil

April 1995 12A, 600V N-Channel IGBT Package JEDEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR (FLANGE) Features - 12A, 600V - Latch Free Operation - Typical Fall Time <500ns - High Input Impedance - Low Conduction Loss .. Description The IGBT is a MOS gated high voltage switching device bining the best Features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25o C and +150o C. Terminal Diagram N-CHANNEL ENHANCEMENT MODE The IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. PACKAGING AVAILABILITY PART NUMBER HGTP12N60D1 PACKAGE TO-220AB BRAND...