HGTP12N60D1 Overview
The IGBT is a MOS gated high voltage switching device bining the best.
HGTP12N60D1 Key Features
- 12A, 600V
- Latch Free Operation
- Typical Fall Time <500ns
- High Input Impedance
- Low Conduction Loss
HGTP12N60D1 datasheet by Intersil (now Renesas).
| Part number | HGTP12N60D1 |
|---|---|
| Datasheet | HGTP12N60D1_IntersilCorporation.pdf |
| File Size | 67.03 KB |
| Manufacturer | Intersil (now Renesas) |
| Description | 600V N-Channel IGBT |
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The IGBT is a MOS gated high voltage switching device bining the best.
View all Intersil (now Renesas) datasheets
| Part Number | Description |
|---|---|
| HGTP12N60D1 | N-Channel IGBT |
| HGTP12N60A4 | N-Channel IGBT |
| HGTP12N60A4D | N-Channel IGBT |
| HGTP12N60B3 | N-Channel IGBT |
| HGTP12N60B3D | N-Channel IGBT |
| HGTP12N60C3 | N-Channel IGBT |
| HGTP12N60C3D | N-Channel IGBT |
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| HGTP10N40C1D | N-Channel IGBT |