HGTP15N50E1 Datasheet | Intersil

HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1 April 1995 15A, 20A, 400V and 500V N-Channel IGBTs Packages HGTH-TYPES JEDEC TO-218AC EMITTER COLLECTOR COLLECTOR (FLANGE) GATE Features - 15A and 20A, 400V and 500V - VCE(ON) 2.5V - TFI 1µs, 0.5µs - Low On-State Voltage - Fast Switching Speeds - High Input Impedance - No Anti-Parallel Diode Applications - Power Supplies - Motor Drives - Protection Circuits HGTP-TYPES JEDEC TO-220AB COLLECTOR (FLANGE) EMITTER COLLECTOR GATE Description The HGTH20N40C1, HGTH20N40E1, HGTH20N50C1, HGTH20N50E1, HGTP15N40C1, HGTP15N40E1, HGTP15N50C1 and HGTP15N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low-power integrated circuits. PACKAGING AVAILABILITY PART NUMBER HGTH20N40C1 HGTH20N40E1 HGTH20N50C1 HGTH20N50E1 HGTP15N40C1 HGTP15N40E1 HGTP15N50C1 HGTP15N50E1 PACKAGE TO-218AC TO-218AC TO-218AC TO-218AC TO-220AB TO-220AB TO-220AB TO-220AB BRAND G20N40C1 G20N40E1 G20N50C1 G20N50E1 G15N40C1 G15N40E1 G15N50C1 G15N50E1 E G Terminal Diagram N-CHANNEL ENHANCEMENT MODE C NOTE: When ordering, use the entire part number. TC = +25oC, Unless Otherwise Specified HGTH20N40C1 HGTH20N50C1 HGTH20N40E1 HGTH20N50E1 Collector-Emitter Voltage- - - - . . . . .VCES 400 500 Collector-Gate Voltage RGE = 1MΩ...