HGTP3N60B3D Datasheet | Intersil

HGTP3N60B3D, HGT1S3N60B3DS Data Sheet January 2000 File Number 4414.1 7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP3N60B3D and HGT1S3N60B3DS are MOS gated high voltage switching devices bining the best Features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25oC and 150oC. The diode used in anti-parallel with the IGBT is the RHRD460. The IGBT used is TA49192. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49193. Features - 7A, 600V TC = 25oC - 600V Switching SOA Capability - Typical Fall Time- - - . 115ns at TJ = 125oC - Short Circuit Rating - Low Conduction Loss - Hyperfast Anti-Parallel Diode - Related Literature - TB334 “Guidelines for Soldering Surface Mount - ponents to PC Boards Packaging JEDEC TO-220AB E COLLECTOR (FLANGE) Ordering Information PART NUMBER HGTP3N60B3D HGT1S3N60B3DS PACKAGE TO-220AB TO-263AB BRAND G3N60B3D G3N60B3D C G NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, i.e., HGT1S3N60B3DS9A. Symbol C TO-263, TO-263AB G G E E COLLECTOR (FLANGE) INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665...