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HM1-6504883 - 4096 x 1 CMOS RAM

General Description

The HM-6504/883 is a 4096 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology.

The device utilizes synchronous circuitry to achieve high performance and low power operation.

Key Features

  • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1.
  • Low Power Standby.
  • . . . . 125µW Max.
  • Low Power Operation.
  • . . . 35mW/MHz Max.
  • Data Retention.
  • . . . at 2.0V Min.
  • TTL Compatible Input/Output.
  • Three-State Output.
  • Standard JEDEC Pinout.
  • Fast Access Time.

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Other Datasheets by Intersil (now Renesas)

Part Number Description
HM1-6504B883 4096 x 1 CMOS RAM
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HM-6504/883 March 1997 4096 x 1 CMOS RAM Description The HM-6504/883 is a 4096 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low power operation. On-chip latches are provided for addresses, data input and data output allowing efficient interfacing with microprocessor systems. The data output can be forced to a high impedance state for use in expanded memory arrays. Gated inputs allow lower operating current and also eliminate the need for pull up or pull down resistors. The HM-6504/883 is a fully static RAM and may be maintained in any state for an indefinite period of time. Data retention supply voltage and supply current are guaranteed over temperature.