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HM1-6514S-9 Datasheet 1024 X 4 CMOS Ram

Manufacturer: Intersil (now Renesas)

Overview: HM-6514 March 1997 1024 x 4 CMOS RAM.

General Description

The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology.

The device utilizes synchronous circuitry to achieve high performance and low power operation.

On-chip latches are provided for addresses allowing efficient interfacing with microprocessor systems.

Key Features

  • Low Power Standby.
  • . . . . 125µW Max.
  • Low Power Operation.
  • . . . 35mW/MHz Max.
  • Data Retention.
  • . . . at 2.0V Min.
  • TTL Compatible Input/Output.
  • Common Data Input/Output.
  • Three-State Output.
  • Standard JEDEC Pinout.
  • Fast Access Time.
  • . . . 120/200ns Max.
  • 18 Pin Package for High Density.
  • On-Chip Address Regist.

More Datasheets from Intersil (now Renesas)

Part Number Description
HM1-6514-9 1024 x 4 CMOS RAM
HM1-6514B-9 1024 x 4 CMOS RAM
HM1-6516-9 2K x 8 CMOS RAM
HM1-65162-9 2K x 8 Asynchronous CMOS Static RAM
HM1-65162B-9 2K x 8 Asynchronous CMOS Static RAM
HM1-65162C-9 2K x 8 Asynchronous CMOS Static RAM
HM1-6516B-9 2K x 8 CMOS RAM
HM1-6518883 1024 x 1 CMOS RAM
HM1-6504883 4096 x 1 CMOS RAM
HM1-6504B883 4096 x 1 CMOS RAM

HM1-6514S-9 Distributor