HM4-6514-B
Description
The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low power operation. On-chip latches are provided for addresses allowing efficient interfacing with microprocessor systems. The data output can be forced to a high impedance state for use in expanded memory arrays. Gated inputs allow lower operating current and also eliminate the need for pull up or pull down resistors. The HM-6514 is a fully static RAM and may be maintained in any state for an indefinite period of time. Data retention supply voltage and supply current are guaranteed over temperature.
Features
- Low Power Standby
- -
- . . . . 125µW Max
- Low Power Operation
- - . . . 35m W/MHz Max
- Data Retention
- -
- - . . . at 2.0V Min
- TTL patible Input/Output
- mon Data Input/Output
- Three-State Output
- Standard JEDEC Pinout
-...
