HP4936DY Description
HP4936DY Data Sheet August 1999 File Number 4469.3 5.8A, 30V, 0.037 Ohm, Dual N-Channel, Logic Level Power MOSFET This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low...
HP4936DY Key Features
- Logic Level Gate Drive
- 5.8A, 30V
- rDS(ON) = 0.037Ω at ID = 5.8A, VGS = 10V
- rDS(ON) = 0.055Ω at ID = 4.7A, VGS = 4.5V
- Related Literature
- TB334, “Guidelines for Soldering Surface Mount ponents to PC Boards”