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HP4936DY - N-Channel Power MOSFET

General Description

only.

Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.

Accordingly, the reader is cautioned to verify that data sheets are current before placing orders.

Key Features

  • Logic Level Gate Drive.
  • 5.8A, 30V.
  • rDS(ON) = 0.037Ω at ID = 5.8A, VGS = 10V.
  • rDS(ON) = 0.055Ω at ID = 4.7A, VGS = 4.5V.
  • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D1(8) D1(7) Ordering Information PART NUMBER HP4936DY.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HP4936DY Data Sheet August 1999 File Number 4469.3 5.8A, 30V, 0.037 Ohm, Dual N-Channel, Logic Level Power MOSFET This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Features • Logic Level Gate Drive • 5.8A, 30V • rDS(ON) = 0.037Ω at ID = 5.