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HPLU3103 - 52A/ 30V/ 0.019 Ohm/ N-Channel Logic Level/ Power MOSFETs

General Description

only.

Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.

Accordingly, the reader is cautioned to verify that data sheets are current before placing orders.

Key Features

  • Logic Level Gate Drive.
  • 52A†, 30V.
  • Low On-Resistance, rDS(ON) = 0.019Ω.
  • UIS Rating Curve.
  • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” † Calculated continuous current based on maximum allowable junction temperature. Package limited to 20A continuous, see Figure 9. Ordering Information PART NUMBER HPLU3103 HPLR3103.

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Full PDF Text Transcription for HPLU3103 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HPLU3103. For precise diagrams, and layout, please refer to the original PDF.

HPLR3103, HPLU3103 Data Sheet July 1999 File Number 4501.2 52A, 30V, 0.019 Ohm, N-Channel Logic Level, Power MOSFETs These are N-Channel enhancement mode silicon gate pow...

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l, Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Features • Logic Level Gate Drive • 52A†, 30V • Low On-Resistance, rDS(ON)

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HPLR3103 52A/ 30V/ 0.019 Ohm/ N-Channel Logic Level/ Power MOSFETs