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HS-4080ARH - Radiation Hardened Full Bridge N-Channel FET Driver

General Description

PIN NUMBER 1 SYMBOL BHB DESCRIPTION B High-side Bootstrap supply.

External bootstrap diode and capacitor are required.

Connect cathode of boot-strap diode and positive side of bootstrap capacitor to this pin.

Key Features

  • Electrically Screened to SMD # 5962-99617.
  • QML Qualified per MIL-PRF-38535 Requirements.
  • Radiation Environment - Gamma Dose.
  • . . 300kRAD(Si) (Max) - Latch-up Immune RSG DI Process.
  • Drives N-Channel FET Full Bridge Including High Side Chop Capability.
  • Bootstrap Supply Max Voltage to 95VDC.
  • TTL Comparator Input Levels.
  • Drives 1000pF Load with Rise and Fall Times of 50ns.
  • User-Programmable Dead Time.

📥 Download Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HS-4080ARH Data Sheet Febuary 2000 File Number 4563.3 Radiation Hardened Full Bridge N-Channel FET Driver The HS-4080ARH is a monolithic, high frequency, medium voltage Full Bridge N-Channel FET Driver IC. The device includes a TTL-level input comparator, which can be used to facilitate the “hysteresis” and PWM modes of operation. Its HEN (high enable) lead can force current to freewheel in the bottom two external power MOSFETs, maintaining the upper power MOSFETs off. The HS-4080ARH is well suited for use in distributed DC power supplies and DC to DC converters, since it can switch at high frequencies.