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HS-4423RH - Radiation Hardened Dual/ Inverting Power MOSFET Drivers

General Description

only.

Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.

Accordingly, the reader is cautioned to verify that data sheets are current before placing orders.

Key Features

  • Electrically Screened to DESC SMD # 5962-99511.
  • QML Qualified per MIL-PRF-38535 Requirements.
  • Radiation Environment - Total Dose (Max).
  • . . . 3 x 105 RAD(SI) - Latch-Up Immune - Low Dose Rate Immune.
  • IPEAK.
  • . . . >2A (Typ).
  • Matched Rise and Fall Times (CL = 4300pF) . . . 75ns (Max).
  • Low Voltage Lock-Out Feature - HS-4423RH.

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📁 Similar Datasheet

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Other Datasheets by Intersil (now Renesas)

Part Number Description
HS-4423BRH Radiation Hardened Dual/ Inverting Power MOSFET Drivers
HS-4424BRH Non-Inverting Power MOSFET Drivers
HS-4424RH Non-Inverting Power MOSFET Drivers
HS-4080ARH Radiation Hardened Full Bridge N-Channel FET Driver
HS-0508RH Radiation Hardened Single 8/Differential 4-Channel CMOS Analog Multiplexers

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HS-4423RH, HS-4423BRH Data Sheet June 1999 File Number 4564.4 Radiation Hardened Dual, Inverting Power MOSFET Drivers The Radiation Hardened HS-4423RH and the HS-4423BRH are inverting, dual, monolithic high-speed MOSFET drivers designed to convert TTL level signals into high current outputs at voltages up to 18V. The inputs of these devices are TTL compatible and can be directly driven by our HS-1825ARH PWM device or by our ACS/ACTS and HCS/HCTS type logic devices. The fast rise times and high current outputs allow very quick control of high gate capacitance power MOSFETs, like our Rad Hard FS055, in high frequency applications. The high current outputs minimize power losses in MOSFETs by rapidly charging and discharging the gate capacitance.