HS-6617RH-T - Radiation Hardened 2K x 8 CMOS PROM

Product Overview

Intersil Corporation

Part number	HS-6617RH-T
Manufacturer	Intersil Corporation
File Size	94.36 KB
Description	Radiation Hardened 2K x 8 CMOS PROM
Datasheet	HS-6617RH-T Datasheet
Additional preview pages of the HS-6617RH-T datasheet.

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QML Class T, Per MIL-PRF-38535.
Radiation Performance - Gamma Dose (γ) 1 x 105 RAD(Si) - SEU LET 16MeV/mg/cm2 - SEL LET 100MeV/mg/cm2.
Field Programmable Nicrome Fuse Links.
Low Standby Power 1.1mW Max.
Low Operating Power 137.5mW/MHz Max.
Fast Access Time 100ns Max.
TTL Compatible Inputs/Outputs.
Synchronous Operation.
On Chip Address Latches, Three-State Outputs Pinouts HS1-6617RH-T (SBDIP), CDIP2-T24 TOP VIEW A.

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Other Datasheets by Intersil Corporation

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Published: Mar 26, 2005 |