HS1-65647RH-Q - Radiation Hardened 8K x 8 SOS CMOS Static RAM

Product Overview

Intersil Corporation

Part number	HS1-65647RH-Q
Manufacturer	Intersil Corporation
File Size	110.84 KB
Description	Radiation Hardened 8K x 8 SOS CMOS Static RAM
Datasheet	HS1-65647RH-Q Datasheet
Additional preview pages of the HS1-65647RH-Q datasheet.

The Intersil HS-65647RH is a fully asynchronous 8K x 8 radiation hardened static RAM.

This RAM is fabricated using the Intersil 1.2 micron silicon-on-sapphire CMOS technology.

1.2 Micron Radiation Hardened SOS CMOS - Total Dose 3 x 105 RAD (Si) - Transient Upset >1 x 1011 RAD (Si)/s - Single Event Upset < 1 x 10-12 Errors/Bit-Day.
Latch-up Free.
LET Threshold >250 MEV/mg/cm2.
Low Standby Supply Current 10mA (Max).
Low Operating Supply Current 100mA (2MHz).
Fast Access Time 50ns (Max), 35ns (Typ).
High Output Drive Capability.
Gated Input Buffers (Gated by E2).
Six Transistor Memory Cell.

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HS100 - Crystal Clock Oscillators (NEL)
HS1010E - N-Channel MOSFET (Chengqi Semiconductor)
HS102M - Ceramic Capacitors (CDE)
HS103DR - DIN Rail Mount (Crydom)
HS103DR-D2490 - DIN Rail Mount (Crydom)
HS103DR-D53TP25D - DIN Rail Mount (Crydom)

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Published: Mar 26, 2005 |