HS1-81C56RH
Description
The HS-81C55/56RH are radiation hardened RAM and I/O chips fabricated using the Intersil radiation hardened Self Aligned Junction Isolated (SAJI) silicon gate technology. Latch-up free operation is achieved by the use of epitaxial starting material to eliminate the parasitic SCR effect seen in conventional bulk CMOS devices. The HS-81C55/56RH is intended for use with the HS-80C85RH radiation hardened microprocessor system. The RAM portion is designed as 2048 static cells organized as 256 x 8. A maximum post irradiation access time of 500ns allows the HS-81C55/56RH to be used with the HS-80C85RH CPU without any wait states. The HS-81C55RH requires an active low chip enable while the HS-81C56RH requires an active high chip enable. These chips are designed for operation utilizing a single 5V power supply.
Features
- Devices QML Qualified in Accordance with MIL-PRF-38535
- Detailed Electrical and Screening Requirements are Contained in SMD# 5962-95818 and Intersil’ QM Plan
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