Datasheet4U Logo Datasheet4U.com

HS9-65647RH Datasheet

Radiation Hardened 8k X 8 Sos CMOS Static Ram

Manufacturer: Intersil (now Renesas)

HS9-65647RH Overview

The Intersil HS-65647RH is a fully asynchronous 8K x 8 radiation hardened static RAM. This RAM is fabricated using the Intersil 1.2 micron silicon-on-sapphire CMOS technology. This technology gives exceptional hardness to all types of radiation, including neutron fluence, total ionizing dose, high intensity ionizing dose rates, and cosmic rays.

HS9-65647RH Key Features

  • 1.2 Micron Radiation Hardened SOS CMOS
  • Total Dose 3 x 105 RAD (Si)
  • Transient Upset >1 x 1011 RAD (Si)/s
  • Single Event Upset < 1 x 10-12 Errors/Bit-Day
  • Latch-up Free
  • LET Threshold >250 MEV/mg/cm2
  • Low Standby Supply Current 10mA (Max)
  • Low Operating Supply Current 100mA (2MHz)
  • Fast Access Time 50ns (Max), 35ns (Typ)
  • High Output Drive Capability

More Datasheets from Intersil (now Renesas)

See all Intersil (now Renesas) datasheets

Part Number Description
HS9-65647RH-8 Radiation Hardened 8K x 8 SOS CMOS Static RAM
HS9-65647RH-Q Radiation Hardened 8K x 8 SOS CMOS Static RAM
HS9-6254RH-Q Radiation Hardened Ultra High Frequency NPN Transistor Array
HS9-6617RH Radiation Hardened 2K x 8 CMOS PROM
HS9-6617RH Radiation Hardened 2K x 8 CMOS PROM
HS9-6617RH-8 Radiation Hardened 2K x 8 CMOS PROM
HS9-6617RH-Q Radiation Hardened 2K x 8 CMOS PROM
HS9-6617RH-T Radiation Hardened 2K x 8 CMOS PROM
HS9-6664RH Radiation Hardened 8K x 8 CMOS PROM
HS9-6664RH-T Radiation Hardened 8K x 8 CMOS PROM

HS9-65647RH Distributor