HS9-65647RH Key Features
- 1.2 Micron Radiation Hardened SOS CMOS
- Total Dose 3 x 105 RAD (Si)
- Transient Upset >1 x 1011 RAD (Si)/s
- Single Event Upset < 1 x 10-12 Errors/Bit-Day
- Latch-up Free
- LET Threshold >250 MEV/mg/cm2
- Low Standby Supply Current 10mA (Max)
- Low Operating Supply Current 100mA (2MHz)
- Fast Access Time 50ns (Max), 35ns (Typ)
- High Output Drive Capability