HS9-82C12RH Description
It is manufactured using a selfaligned, junction-isolated EPI-CMOS process.
HS9-82C12RH Key Features
- Devices QML Qualified in Accordance with MIL-PRF-38535
- Detailed Electrical and Screening Requirements are Contained in SMD# 5962-95818 and Intersil’ QM Plan
- Radiation Hardened CMOS Process
- Total Dose 1 x 105 RAD (Si)
- Transient Upset > 1 x 108 RAD (Si)/s
- Latch-Up Immune EPI-CMOS > 1 x 1012 RAD (Si)/s
- Low Power Dissipation High Noise Immunity Single Power Supply +5V Low Input Load Current 8-Bit Data Register and Buffer