HUF75329G3 Overview
This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor...
HUF75329G3 Key Features
- 49A, 55V
- Ultra Low On-Resistance, rDS(ON) = 0.024Ω
- Temperature pensating PSPICE® and SABER© Models
- Available on the web at: .Intersil
- Thermal Impedance PSPICE and SABER Models
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
- Related Literature
- TB334, “Guidelines for Soldering Surface Mount ponents to PC Boards”
