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HUF75631P3 - N-Channel MOSFET

Key Features

  • Ultra Low On-Resistance - rDS(ON) = 0.040Ω, VGS = 10V.
  • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www. semi. Intersil. com.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve DRAIN (FLANGE) HUF75631P3 Symbol D Ordering Information PART NUMBER HUF75631P3 G.

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📁 Similar Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HUF75631P3 Data Sheet October 1999 File Number 4720.1 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE Features • Ultra Low On-Resistance - rDS(ON) = 0.040Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.semi.Intersil.com • Peak Current vs Pulse Width Curve • UIS Rating Curve DRAIN (FLANGE) HUF75631P3 Symbol D Ordering Information PART NUMBER HUF75631P3 G PACKAGE TO-220AB BRAND 75631P S Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HUF75631P3 UNITS V V V A A 100 100 ±20 33 23 Figure 4 Figures 6, 14, 15 120 0.80 -55 to 175 300 260 W W/oC oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . .