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HUF75637S3S - N-Channel MOSFET

Key Features

  • JEDEC TO-263AB DRAIN (FLANGE).
  • Ultra Low On-Resistance - rDS(ON) = 0.030Ω, VGS = 10V.
  • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www. semi. Intersil. com.
  • Peak Current vs Pulse Width Curve DRAIN (FLANGE) GATE SOURCE HUF75637P3 HUF75637S3S.
  • UIS Rating Curve Symbol D Ordering Information PART NUMBER HUF75637P3 G.

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Brand Logo Part Number Description Manufacturer
Fairchild Semiconductor Logo HUF75637S3S N-Channel MOSFET Fairchild Semiconductor

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HUF75637P3, HUF75637S3S Data Sheet October 1999 File Number 4721.1 44A, 100V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE Features JEDEC TO-263AB DRAIN (FLANGE) • Ultra Low On-Resistance - rDS(ON) = 0.030Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.semi.Intersil.com • Peak Current vs Pulse Width Curve DRAIN (FLANGE) GATE SOURCE HUF75637P3 HUF75637S3S • UIS Rating Curve Symbol D Ordering Information PART NUMBER HUF75637P3 G PACKAGE TO-220AB TO-263AB BRAND 75637P 75637S HUF75637S3S S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUF75637S3ST.