HUF76137S3S Overview
HUF76137P3, HUF76137S3S Data Sheet September 1999 File Number 4398.6 75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the...
HUF76137S3S Key Features
- Logic Level Gate Drive
- 75A, 30V
- Ultra Low On-Resistance, rDS(ON) = 0.009Ω
- Temperature pensating PSPICE™ Model
- Temperature pensating SABER Model
- Thermal Impedance SPICE Model
- Thermal Impedance SABER Model
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
- Related Literature
