IRF9240 Overview
IRF9240 Data Sheet February 1999 File Number 2279.2 -11A, -200V, 0.500 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching...
IRF9240 Key Features
- 11A, -200V
- rDS(ON) = 0.500Ω
- Single Pulse Avalanche Energy Rated
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- Related Literature
- TB334, “Guidelines for Soldering Surface Mount ponents to PC Boards”
