IRFF9220 Overview
IRFF9220 Data Sheet July 1998 File Number 2288.2 -2.5A, -200V, 1.5 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor...
IRFF9220 Key Features
- 2.5A, -200V
- rDS(ON) = 1.5Ω
- Single Pulse Avalanche Energy Rated
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
