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IRFF9230 Datasheet P-channel Power MOSFET

Manufacturer: Intersil (now Renesas)

Overview: IRFF9230 Data Sheet February 1999 File Number 2225.2 -4.0A, -200V, 0.800 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17512.

Key Features

  • -4.0A, -200V.
  • rDS(ON) = 0.800Ω.
  • Single Pulse Avalanche Energy Rated.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance Symbol D Ordering Information PART NUMBER IRFF9230.

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