IRFR110 Overview
IRFR110, IRFU110 Data Sheet July 1999 File Number 3275.3 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These advanced power MOSFETs are designed for use in applications such as switching regulators, switching...
IRFR110 Key Features
- 4.7A, 100V
- rDS(ON) = 0.540Ω
- Single Pulse Avalanche Energy Rated
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- 175oC Operating Temperature
- Related Literature
- TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards”
