IRFR120 Overview
IRFR120, IRFU120 Data Sheet July 1999 File Number 2414.2 8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching...
IRFR120 Key Features
- 8.4A, 100V
- rDS(ON) = 0.270Ω
- Single Pulse Avalanche Energy Rated
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- Related Literature
- TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards”
