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IRFU110 - N-Channel Power MOSFETs

Download the IRFU110 datasheet PDF. This datasheet also covers the IRFR110 variant, as both devices belong to the same n-channel power mosfets family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 4.7A, 100V.
  • rDS(ON) = 0.540Ω.
  • Single Pulse Avalanche Energy Rated.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • 175oC Operating Temperature.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRFU110 IRFR110.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFR110_IntersilCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRFU110 Power MOSFET Vishay Siliconix
IRFU110 N-Channel Power MOSFETs Fairchild Semiconductor
IRFU110 Power MOSFET International Rectifier
IRFU110A Power MOSFET Samsung
IRFU1010Z AUTOMOTIVE MOSFET International Rectifier

Other Datasheets by Intersil (now Renesas)

Part Number Description
IRFU120 N-Channel Power MOSFETs
IRFU214 N-Channel Power MOSFETs
IRFU220 N-Channel Power MOSFETs
IRFU320 N-Channel Power MOSFETs
IRFU410 N-Channel Power MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IRFR110, IRFU110 Data Sheet July 1999 File Number 3275.3 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These advanced power MOSFETs are designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These transistors can be operated directly from integrated circuits. Formerly developmental type TA17441. Features • 4.7A, 100V • rDS(ON) = 0.