JANSR2N7281 Overview
Total dose hardness is offered at 100K RAD (Si) and 1000K RAD (Si) with neutron hardness ranging from 1E13 for 500V product to 1E14 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting. This MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure.
JANSR2N7281 Key Features
- 2A, 500V, rDS(ON) = 2.50Ω
- Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
- Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
- Photo Current
- 8nA Per-RAD (Si)/s Typically
- Neutron
- Maintain Pre-RAD Specifications for 3E12 Neutrons/cm2