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JANSR2N7407 - Formerly Available As FSF254R4/ Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs

Key Features

  • 18A, 250V, rDS(ON) = 0.170Ω.
  • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si).
  • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
  • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
  • Photo Current - 15nA Per-RAD(Si)/s Typically.
  • Neutron - Maintain Pre-RAD Spec.

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Datasheet Details

Part number JANSR2N7407
Manufacturer Intersil (now Renesas)
File Size 55.20 KB
Description Formerly Available As FSF254R4/ Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs
Datasheet download datasheet JANSR2N7407 Datasheet

Full PDF Text Transcription for JANSR2N7407 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for JANSR2N7407. For precise diagrams, and layout, please refer to the original PDF.

JANSR2N7407 Data Sheet December 1998 File Number 4636 Formerly Available As FSF254R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Op...

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ened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.

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