JANSR2N7410 - 3.5A/ 100V/ 0.600 Ohm/ Rad Hard/ N-Channel Power MOSFET
Intersil (now Renesas)
General Description
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.
Key Features
3.5A, 100V, rDS(ON) = 0.600Ω.
Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si).
Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
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JANSR2N7410 Formerly FSL110R4 March 1998 3.5A, 100V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET Description The Discrete Products Operation of Intersil Corporation has d...
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cription The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed. The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in
JANSR2N7410 Datasheet
