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P4N05L - RFP4N05L

General Description

only.

Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.

Accordingly, the reader is cautioned to verify that data sheets are current before placing orders.

Key Features

  • 4A, 50V and 60V.
  • rDS(ON) = 0.800Ω.
  • Design Optimized for 5V Gate Drives.
  • Can be Driven Directly from QMOS, NMOS, TTL Circuits.
  • Compatible with Automotive Drive Requirements.
  • SOA is Power-Dissipation Limited.
  • Nanosecond Switching Speeds Ordering Information PART NUMBER RFP4N05L RFP4N06L.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RFP4N05L, RFP4N06L www.DataSheet4U.com Data Sheet July 1999 File Number 2876.2 4A, 50V and 60V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs The RFP4N05L and RFP4N06L are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09520. Features • 4A, 50V and 60V • rDS(ON) = 0.