Datasheet4U Logo Datasheet4U.com

RF1K49086 - 3.5A/ 30V/ 0.06 Ohm/ Dual N-Channel LittleFET Power MOSFET

Key Features

  • 3.5A, 30V.
  • rDS(ON) = 0.060Ω.
  • Temperature Compensating PSPICE® Model.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RF1K49086.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
RF1K49086 Data Sheet August 1999 File Number 3986.5 3.5A, 30V, 0.06 Ohm, Dual N-Channel LittleFET™ Power MOSFET This Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switching regulators, switching convertors, motor drivers, relay drivers, and low voltage bus switches. This device can be operated directly from integrated circuits. Formerly developmental type TA49086. Features • 3.5A, 30V • rDS(ON) = 0.