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RF1K49090 - 3.5A/ 12V/ 0.050 Ohm/ Logic Level/ Dual N-Channel LittleFET Power MOSFET

Datasheet Summary

Features

  • 3.5A, 12V.
  • rDS(ON) = 0.050Ω.
  • Temperature Compensating PSPICE® Model.
  • On-Resistance vs Gate Drive Voltage Curves.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol BRAND RF1K49090 S1(1) G1(2) D1(8) D1(7) Ordering Information PART NUMBER RF1K49090.

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Datasheet Details

Part number RF1K49090
Manufacturer Intersil Corporation
File Size 127.72 KB
Description 3.5A/ 12V/ 0.050 Ohm/ Logic Level/ Dual N-Channel LittleFET Power MOSFET
Datasheet download datasheet RF1K49090 Datasheet
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RF1K49090 Data Sheet August 1999 File Number 3985.6 3.5A, 12V, 0.050 Ohm, Logic Level, Dual N-Channel LittleFET™ Power MOSFET This Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and low voltage bus switches. This product achieves full rated conduction at a gate bias in the 3V - 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA49090. Features • 3.5A, 12V • rDS(ON) = 0.
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