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RF1S4N100SM - 4.3A/ 1000V/ 3.500 Ohm/ High Voltage/ N-Channel Power MOSFETs

Description

only.

Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.

Accordingly, the reader is cautioned to verify that data sheets are current before placing orders.

Features

  • 4.3A, 1000V.
  • rDS(ON) = 3.500Ω.
  • UIS Rating Curve (Single Pulse).
  • -55oC to 150oC Operating Temperature.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER RFP4N100 RF1S4N100SM.

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Full PDF Text Transcription

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RFP4N100, RF1S4N100SM Data Sheet August 1999 File Number 2457.4 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs The RFP4N100 and RFP4N100SM are N-Channel enhancement mode silicon gate power field effect transistors. They are designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from an integrated circuit. Formerly developmental type TA09850. Features • 4.3A, 1000V • rDS(ON) = 3.
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