RF1S9640SM Description
IRF9640, RF1S9640SM Data Sheet July 1999 File Number 2284.2 11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon-gate power field-effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching...
RF1S9640SM Key Features
- 11A, 200V
- rDS(ON) = 0.500Ω
- Single Pulse Avalanche Energy Rated
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- Related Literature
- TB334, “Guidelines for Soldering Surface Mount ponents to PC Boards”