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RFD15P06 - P-Channel Power MOSFET

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Overview

RFD15P06, RFD15P06SM, RFP15P06 Data Sheet July 1999 File Number 3988.3 15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs These P-Channel power MOSFETs are manufactured using the MegaFET process.

This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance.

They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers.

These transistors can be operated directly from integrated circuits.

Formerly developmental type TA09833.

Key Features

  • 15A, 60V.
  • rDS(ON) = 0.150Ω.
  • Temperature Compensating PSPICE® Model.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RFD15P06 RFD15P06SM RFP15P06.

More Datasheets from Intersil (now Renesas)

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RFD10P03L 10A/ 30V/ 0.200 Ohm/ Logic Level/ P-Channel Power MOSFET
RFD10P03LSM 10A/ 30V/ 0.200 Ohm/ Logic Level/ P-Channel Power MOSFET
RFD12N06RLE 12A/ 60V/ 0.135 Ohm/ N-Channel/ Logic Level/ Power MOSFETs
RFD12N06RLESM 12A/ 60V/ 0.135 Ohm/ N-Channel/ Logic Level/ Power MOSFETs
RFD14N05L 14A/ 50V/ 0.100 Ohm/ Logic Level/ N-Channel Power MOSFETs