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RFD20N03SM - N-Channel Power MOSFET

Key Features

  • 20A, 30V.
  • rDS(ON) = 0.025Ω.
  • Temperature Compensating PSPICE® Model.
  • Thermal Impedance SPICE Model.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • 175oC Operating Temperature.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RFD20N03 RFD20N03SM.

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Other Datasheets by Intersil (now Renesas)

Part Number Description
RFD20N03 N-Channel Power MOSFET
RFD10P03L 10A/ 30V/ 0.200 Ohm/ Logic Level/ P-Channel Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RFD20N03, RFD20N03SM Data Sheet July 1999 File Number 4350.1 20A, 30V, 0.025 Ohm, N-Channel Power MOSFETs The RFD20N03 and RFD20N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49235. Features • 20A, 30V • rDS(ON) = 0.