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RFF70N06 - N-Channel Power MOSFET

Key Features

  • 25A†, 60V.
  • rDS(ON) = 0.025Ω.
  • Temperature Compensating PSPICE™ Model.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • 150oC Operating Temperature.
  • Reliability Screened † Current is limited by the package capability. Symbol D Ordering Information PART NUMBER RFF70N06.

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Other Datasheets by Intersil (now Renesas)

Part Number Description
RFF60P06 P-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RFF70N06 Data Sheet March 1999 File Number 4073.2 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET The RFF70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Reliability screening is available as either commercial or TX/TXV equivalent of MIL-S-19500. Contact Intersil Corporation High-Reliability Marketing group for any desired deviations from the data sheet. Formerly developmental type TA49007. Features • 25A†, 60V • rDS(ON) = 0.