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RFG60P05E - P-Channel Power MOSFET

Key Features

  • 60A, 50V.
  • rDS(ON) = 0.030Ω.
  • Temperature Compensating PSPICE® Model.
  • 2kV ESD Rated.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • 175oC Operating Temperature.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RFG60P05E NOTE:.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RFG60P05E Data Sheet July 1999 File Number 2745.6 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET This is a P-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. This type can be operated directly from integrated circuits. Formerly developmental type TA09835. Features • 60A, 50V • rDS(ON) = 0.