RFG75N05E Description
RFG75N05E Data Sheet July 1999 File Number 2275.5 75A, 50V, 0.008 Ohm, N-Channel Power MOSFET These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators,...
RFG75N05E Key Features
- 75A, 50V
- rDS(ON) = 0.008Ω
- Electrostatic Discharge Rated
- UIS Rating Curve (Single Pulse)
- 175oC Operating Temperature
- Temperature pensated PSPICE® Model Provided