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RFG75N05E - N-Channel Power MOSFET

Key Features

  • 75A, 50V.
  • rDS(ON) = 0.008Ω.
  • Electrostatic Discharge Rated.
  • UIS Rating Curve (Single Pulse).
  • 175oC Operating Temperature.
  • Temperature Compensated PSPICE® Model Provided Symbol D Ordering Information PART NUMBER RFG75N05E.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RFG75N05E Data Sheet July 1999 File Number 2275.5 75A, 50V, 0.008 Ohm, N-Channel Power MOSFET These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09821. Features • 75A, 50V • rDS(ON) = 0.