RFH10N50
Features
- 10A, 450V and 500V
[ /Title These are N-Channel enhancement mode silicon gate
- r DS(ON) = 0.600Ω (RFH10 power field effect transistors designed for applications such
- Related Literature as switching regulators, switching converters, motor drivers, N45,
- TB334 “Guidelines for Soldering Surface Mount relay drivers, and drivers for high power bipolar switching RFH10N ponents to PC Boards” transistors requiring high speed and low gate drive power. 50) These types can be operated directly from integrated circuits. /Subject Symbol Formerly developmental type TA17435. (10A, D 450V Ordering Information and PART NUMBER PACKAGE BRAND G 500V, RFH10N45 TO-218AC RFH10N45 0.600 S RFH10N50 TO-218AC RFH10N50 Ohm, N-Chan- NOTE: When ordering, include the entire part number. nel Power Packaging MOSJEDEC TO-218AC FETs) SOURCE /Author DRAIN () GATE /Keywords (Harris Semiconductor, DRAIN (FLANGE) N-Channel Power MOSFETs, TO218AC) /Creator () /DOCIN FO pdfmark
CAUTION: These devices are...
