RFH12N35 Description
RFH12N35, RFH12N40 Data Sheet October 1998 File Number 1630.2 12A, 350V and 400V, 0.380 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. These types...
RFH12N35 Key Features
- 12A, 350V and 400V
- rDS(ON) = 0.380Ω
- Related Literature
- TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards”