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RFH25P10 - P-Channel Power MOSFET

General Description

These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

Key Features

  • -25A, -100V and -80V.
  • rDS(ON) = 0.150Ω.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” [ /Title (RFH25 P08, RFH25P 10, RFK25P 08, RFK25P 10) /Subject (-25A, 100V, 80V, 0.150 Ohm, PChannel Power MOSFETs) /Author () /Keywords (25A, 100V a80V, 0.150 Ohm, PChannel Power MOSFETs) /Creator () /DOCIN FO pdfmark Ordering Information PART NUMBER RFH25P08 RFH25P10 RFK25P08 RFK25P10.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Semiconductor RFH25P08, RFH25P10, RFK25P08, RFK25P10 -25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs Description These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA49230. BRAND RFH25P08 RFH25P10 RFK25P08 RFK25P10 G September 1998 Features • -25A, -100V and -80V • rDS(ON) = 0.