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RFK25P08 - P-Channel Power MOSFET

Description

These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

Features

  • -25A, -100V and -80V.
  • rDS(ON) = 0.150Ω.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” [ /Title (RFH25 P08, RFH25P 10, RFK25P 08, RFK25P 10) /Subject (-25A, 100V, 80V, 0.150 Ohm, PChannel Power MOSFETs) /Author () /Keywords (25A, 100V a80V, 0.150 Ohm, PChannel Power MOSFETs) /Creator () /DOCIN FO pdfmark Ordering Information PART NUMBER RFH25P08 RFH25P10 RFK25P08 RFK25P10.

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Datasheet Details

Part number RFK25P08
Manufacturer Intersil
File Size 33.21 KB
Description P-Channel Power MOSFET
Datasheet download datasheet RFK25P08 Datasheet
Additional preview pages of the RFK25P08 datasheet.

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Full PDF Text Transcription

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Semiconductor RFH25P08, RFH25P10, RFK25P08, RFK25P10 -25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs Description These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA49230. BRAND RFH25P08 RFH25P10 RFK25P08 RFK25P10 G September 1998 Features • -25A, -100V and -80V • rDS(ON) = 0.
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