RFM12N35
Description
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
BRAND RFM12N35 RFM12N40
September 1998
Features
- 12A, 350V and 400V
- r DS(ON) = 0.500Ω
[ /Title (RFM12 N35, RFM12 N40) /Subject (12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs) /Author () /Keywords (12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs) /Creator () /DOCIN
Ordering Information
PART NUMBER RFM12N35 RFM12N40 PACKAGE TO-204AA TO-204AA
Formerly developmental type TA17434.
Symbol
NOTE: When ordering, use the entire part number.
Packaging
JEDEC TO-204AA
DRAIN (FLANGE)
SOURCE (PIN 2) GATE (PIN 1)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper...
