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RFM12N35 - N-Channel Power MOSFET

General Description

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

Key Features

  • 12A, 350V and 400V.
  • rDS(ON) = 0.500Ω [ /Title (RFM12 N35, RFM12 N40) /Subject (12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs) /Author () /Keywords (12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs) /Creator () /DOCIN Ordering Information PART NUMBER RFM12N35 RFM12N40.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Semiconductor RFM12N35, RFM12N40 12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. BRAND RFM12N35 RFM12N40 September 1998 Features • 12A, 350V and 400V • rDS(ON) = 0.500Ω [ /Title (RFM12 N35, RFM12 N40) /Subject (12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs) /Author () /Keywords (12A, 350V and 400V, 0.