RFP10N15 Description
RFP10N15 Data Sheet March 1999 File Number 1445.3 10A, 150V, 0.300 Ohm, N-Channel Power MOSFETs These are N-channel enhancement-mode silicon-gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated...
RFP10N15 Key Features
- 10A, 150V
- rDS(ON) = 0.300Ω
- Related Literature
- TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards”