Datasheet Summary
RFD10P03L, RFD10P03LSM, RFP10P03L
Data Sheet July 1999 File Number
10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET
These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49205.
Features
- 10A, 30V
- rDS(ON) = 0.200Ω
- Temperature pensating PSPICE® Model
- PSPICE Thermal...
